Alexandra Boltasseva, left, Ron and Dotty Garvin Tonjes Distinguished Professor, and Vladimir Shalaev, Bob and Anne Burnett ...
Engineers from North Carolina State University, Adroit Materials and Poland’s Institute of High-Pressure Physics have reduced ...
Abstract: A polarization-based p-channel GaN insulated gate bipolar transistor (PB P-IGBT) is proposed and validated through calibrated TCAD simulation. The emitter and collector regions of the ...
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